MAGNETOHYDRODYNAMICS OF SILICON MELTS IN THE CZOCHRALSKI CRYSTAL GROWTH METHOD
To study the flow of electrically conducting silicon melts under high magnetic field strength.
To observe segregation of oxygen and implications to crystal quality.
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SIMULATIONS
Gr = 10^5, Pr = 0.01 and Re_x = 150
NO MAGNETIC FIELD APPLIED Ha = 0
Fig. 1.
Fluid particle traces colored with temperature field (cold blue, hot red).
Fig. 2. Fluid particle traces; top view showing the crystal at lower temperature.
Fig. 4. Pressure field at the top (free surface and crystal interface).
Fig. 3. Pressure field on the bottom of the crucible.
TRANSVERSAL MAGNETIC FIELD APPLIED Ha = 45
Fig. 4.
Fluid particle traces colored with temperature field (cold blue, hot red)
showing symmetry breaking in the direction of the applied magnetic
field.
Fig. 5. Fluid particle traces; front view showing vortex rolls.
Fig. 6. Fluid particle traces and velocity vectors; top view showing the crystal
and melt free surface.
Fig. 7. Fluid particle traces; bottom of the crucible.
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